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IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B
32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
* Vdd =Vddq = 2.5V+0.2V (-5, -6, -75) * Double data rate architecture; two data transfers per clock cycle. * Bidirectional , data strobe (DQS) is transmitted/ received with data * Differential clock input (CLK and /CLK) * DLL aligns DQ and DQS transitions with CLK transitions edges of DQS * Commands entered on each positive CLK edge; * Data and data mask referenced to both edges of DQS * 4 bank operation controlled by BA0 , BA1 (Bank Address) * /CAS latency -2.0 / 2.5 / 3.0 (programmable) ; Burst length -2 / 4 / 8 (programmable) Burst type -Sequential / Interleave (programmable) * Auto precharge/ All bank precharge controlled by A10 * 8192 refresh cycles / 64ms (4 banks concurrent refresh) * Auto refresh and Self refresh * Row address A0-12 / Column address A0-9(x8)/ A0-8(x16) * SSTL_2 Interface * Package: 66-pin TSOP II (x8 and x16) 60-ball TF-BGA (x16 only) * Temperature Range: Commercial (0oC to +70oC) Industrial (-40oC to +85oC) Automotive (-40oC to +85oC)
AUGUST 2010
FEATURES:
DESCRIPTION:
IS43/46R83200B is a 4-bank x 8,388,608-word x8bit, IS43/46R16160B is a 4-bank x 4,194,304-word x 16bit double data rate synchronous DRAM , with SSTL_2 interface. All control and address signals are referenced to the rising edge of CLK. Input data is registered on both edges of data strobe, and output data and data strobe are referenced on both edges of CLK. The device achieves very high speed clock rate up to 200 MHz.
KEY TIMING PARAMETERS
Parameter -5 -6 -75 Clk Cycle Time CAS Latency = 3 5 6 7.5 CAS Latency = 2.5 5 6 7.5 CAS Latency = 2 7.5 7.5 7.5 Clk Frequency CAS Latency = 3 200 167 133 CAS Latency = 2.5 200 167 133 CAS Latency = 2 133 133 133 Access Time from Clock CAS Latency = 3 +0.70 +0.70 +0.75 CAS Latency = 2.5 +0.70 +0.70 +0.75 CAS Latency = 2 +0.75 +0.75 +0.75 Unit ns ns ns MHz MHz MHz ns ns ns
ADDRESS TABLE
Parameter Configuration Bank Address Pins Autoprecharge Pins Row Addresses Column Addresses Refresh Count 32M x 8 8M x 8 x 4 banks BA0, BA1 A10/AP A0 - A12 A0 - A9 8192 / 64ms 16M x 16 4M x 16 x 4 banks BA0, BA1 A10/AP A0 - A12 A0 - A8 8192 / 64ms
Copyright (c) 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
1
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B
PIN CONFIGURATION
Package Code B: 60-ball TF-BGA (top view) (8mm x 13mm Body, 0.8mm x 1.0mm Ball Pitch) Top View (Balls seen through the package)
UDQS
LDQS
UDM
LDM
CLK
WE
CAS
A12
RAS
CS
PIN DESCRIPTION: for x16
A0-A12 A0-A8 BA0, BA1 DQ0 - DQ15 CLK, CLK CKE CS CAS RAS Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Column Address Strobe Command Row Address Strobe Command WE LDM, UDM LDQS, UDQS VDD VDDQ VSS VSSQ VREF NC Write Enable Data Write Mask Data Strobe Power Power Supply for I/O Pins Ground Ground for I/O Pins SSTL_2 reference voltage No Connection
2
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B
PIN CONFIGURATIONS
66 pin TSOP - Type II for x8, x16
x8
VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC NC VDD NC NC WE CAS RAS CS NC BA0 BA1 A10/AP A0 A1 A2 A3 VDD
x16
VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM WE CAS RAS CS NC BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34
x16
VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 NC VSSQ UDQS NC VREF VSS UDM CLK CLK CKE NC A12 A11 A9 A8 A7 A6 A5 A4 VSS
x8
VSS DQ7 VSSQ NC DQ6 VDDQ NC DQ5 VSSQ NC DQ4 VDDQ NC NC VSSQ DQS NC VREF VSS DM CLK CLK CKE NC A12 A11 A9 A8 A7 A6 A5 A4 VSS
PIN DESCRIPTION:
A0-A12 A0-A8 (x16) A0-A9 (x8) BA0, BA1 DQ0 - DQ15 (x16) DQ0 - DQ7 (x8) CLK, CLK CKE CS CAS RAS Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Column Address Strobe Command Row Address Strobe Command WE LDM, UDM (x16) DM (x8) LDQS, UDQS (x16) DQS (x8) VDD VDDQ VSS VSSQ VREF NC Write Enable Data Write Mask Data Strobe Power Power Supply for I/O Pins Ground Ground for I/O Pins SSTL_2 reference voltage No Connection
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
3
IS43R83200B, IS46R83200B I Preliminary IS43R16160B, IS46R16160B I
PIN FUNCTION
SYMBOL TYPE DESCRIPTION
Zentel Electronics Corporation
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
CLK, /CLK
Input
Clock: CLK and /CLK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CLK and negative edge of /CLK. Output (read) data is referenced to the crossings of CLK and /CLK (both directions of crossing). Clock Enable: CKE controls internal clock. When CKE is low, internal clock for the following cycle is ceased. CKE is also used to select auto / self refresh. After self refresh mode is started, CKE becomes asynchronous input. Self refresh is maintained as long as CKE is low. Chip Select: When /CS is high, any command means No Operation. Combination of /RAS, /CAS, /WE defines basic commands. A0-12 specify the Row / Column Address in conjunction with BA0,1. The Row Address is specified by A0-12. The Column Address is specified by A0-9(x8) and A0-8(x16). A10 is also used to indicate precharge option. When A10 is high at a read / write command, an auto precharge is performed. When A10 is high at a precharge command, all banks are precharged. Bank Address: BA0,1 specifies one of four banks to which a command is applied. BA0,1 must be set with ACT, PRE, READ, WRITE commands. Data Input/Output: Data bus Data Strobe: Output with read data, input with write data. Edge-aligned with read data, centered in write data. Used to capture write data. For the x16, LDQS corresponds to the data on DQ0-DQ7; UDQS correspond to the data on DQ8-DQ15 Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with that input data during a WRITE access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. For the x16, LDM corresponds to the data on DQ0-DQ7; UDM corresponds to the data on DQ8-DQ15. Power Supply for the memory array and peripheral circuitry.
VDDQ, and VSSQ are supplied to the Output Buffers only.
CKE
Input
/CS /RAS, /CAS, /WE
Input Input
A0-12
Input
BA0,1 DQ0-7 (x8), DQ0-15 (x16),
Input
Input / Output
DQS (x8) Input / Output UDQS, LDQS (x16)
DM (x8) UDM, LDM (x16)
Input
VDD, VSS VDDQ, VSSQ
Power Supply Power Supply Input
Vref
SSTL_2 reference voltage.
4
Integrated Silicon Solution, Inc.
DDR SDRAM (Rev.1.1)
Rev. E 08/13/2010
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B
BLOCK DIAGRAM x8
DLL
DQ 0 - 7
DQ S
I/O B uffer
DQ S Bu ffer
Memory Arra y Ba nk #0
Memory Arra y Ba nk #1
Memory Arra y Ba nk #2
Memory Arra y Ba nk #3
Mode Re gister Control C ircu itry
Addres s B uffer Cl ock B uffer A0-1 2 BA 0,1 CLK /CLK CKE
Control Signal B uffer
/CS /RAS /CAS
/WE
DM
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
5
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B
BLOCK DIAGRAM x16
DLL
DQ 0 - 15
UDQS, LD QS
I/O B uffer
DQ S Buffer
Memory Array Bank #0
Memory Array Ba nk #1
Memory Array Ba nk #2
Memory Array Ba nk #3
Mode Re gister Control C ircu itry
Addres s B uffer Cl ock B uffer A0-1 2 BA 0,1 CLK /CLK CKE
Control Signal B uffer
/CS /RAS /CAS
/WE
UDM , LD M
6
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
Zentel Electronics Corporation
IS43R83200B, IS46R83200B Preliminary IS43R16160B, IS46R16160B
BASIC FUNCTIONS
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
ISSI's 256-Mbit DDR SDRAM provides basic functions, bank (row) activate, burst read / write, bank (row) precharge, and auto / self refresh. Each command is defined by control signals of /RAS, /CAS and /WE at CLK rising edge. In addition to 3 signals, /CS , CKE and A10 are used as chip select, refresh option, and precharge option, respectively. To know the detailed definition of commands, please see the command truth table.
/CLK CLK /CS /RAS /CAS /WE CKE A10
Chip Select : L=select, H=deselect Command Command Command Refresh Option @refresh command Precharge Option @precharge or read/write command define basic commands
Activate (ACT) [/RAS =L, /CAS =/WE =H] ACT command activates a row in an idle bank indicated by BA. Read (READ) [/RAS =H, /CAS =L, /WE =H] READ command starts burst read from the active bank indicated by BA. First output data appears after /CAS latency. When A10 =H at this command, the bank is deactivated after the burst read (autoprecharge, READA) Write (WRITE) [/RAS =H, /CAS =/WE =L] WRITE command starts burst write to the active bank indicated by BA. Total data length to be written is set by burst length. When A10 =H at this command, the bank is deactivated after the burst write (auto-precharge, WRITEA) Precharge (PRE) [/RAS =L, /CAS =H, /WE =L] PRE command deactivates the active bank indicated by BA. This command also terminates burst read /write operation. When A10 =H at this command, all banks are deactivated (precharge all, PREA ). Auto-Refresh (REFA) [/RAS =/CAS =L, /WE =CKE =H] REFA command starts auto-refresh cycle. Refresh address including bank address are generated internally. After this command, the banks are precharged automatically.
DDR SDRAM (Rev.1.1) Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
7
IS43R83200B, IS46R83200B Preliminary I IS43R16160B, IS46R16160B I COMMAND TRUTH TABLE
COMMAND Deselect No Operation Row Address Entry & Bank Activate Single Bank Precharge Precharge All Banks Column Address Entry & Write Column Address Entry & Write with Auto-Precharge Column Address Entry & Read Column Address Entry & Read with Auto-Precharge Auto-Refresh Self-Refresh Entry Self-Refresh Exit Burst Terminate Mode Register Set MNEMONIC DESEL NOP ACT PRE PREA WRITE CKE n-1 H H H H H H CKE n X X H H H H
Zentel Electronics Corporation
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
/CS H L L L L L
/RAS X H L L L H
/CAS X H H H H L
/WE BA0,1 X H H L L L X X V V X V
A10 /AP X X V L H L
A0-9, note 11-12 X X V X X V
WRITEA READ READA REFA REFS REFSX TERM MRS
H H H H H L L H H
H H H H L H H H H
L L L L L H L L L
H H H L L X H H L
L L L L L X H H L
L H H H H X H L L
V V V X X X X X L
H L H X X X X X L
V V V X X X X X V 1 2
H=High Level, L=Low Level, V=Valid, X=Don't Care, n=CLK cycle number NOTE: 1. Applies only to read bursts with autoprecharge disabled; this command is undefined (and should not be used) for read bursts with autoprecharge enabled, and for write bursts. 2. BA0-BA1 select either the Base or the Extended Mode Register (BA0 = 0, BA1 = 0 selects Mode Register;BA0=1 , BA1 = 0 selects Extended Mode Register; other combinations of BA0-BA1 are reserved; A0-A12 provide the op-code to be written to the selected Mode Register.
8
DDR SDRAM (Rev.1.1)
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
IS43R83200B, IS46R83200B Preliminary IS43R16160B, IS46R16160B
FUNCTION TRUTH TABLE
Current State IDLE /CS /RAS /CAS /WE Address H X X XX L L L L L L L ROW ACTIVE H L L L L L L L L READ(AutoPrecharge Disabled) H L L L L L L L L H H H L L L L X H H H H L L L L X H H H H L L L L H H L H H L L X H H L L H H L L X H H L L H H L L HX L BA X BA, CA, A10 H BA, RA L BA, A10 HX Op-Code, ModeL Add XX HX L BA H BA, CA, A10 L BA, CA, A10
Zentel Electronics Corporation
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
Command DESEL NOP TERM READ / WRITE ACT PRE / PREA REFA MRS DESEL NOP TERM READ / READA WRITE / WRITEA ACT PRE / PREA REFA MRS DESEL NOP TERM READ / READA WRITE / WRITEA ACT PRE / PREA
Action NOP NOP ILLEGAL ILLEGAL Bank Active, Latch RA NOP Auto-Refresh Mode Register Set NOP NOP ILLEGAL Begin Read, Latch CA, Determine Auto-Precharge Begin Write, Latch CA, Determine Auto-Precharge Bank Active / ILLEGAL Precharge / Precharge All ILLEGAL ILLEGAL NOP (Continue Burst to END) NOP (Continue Burst to END) Terminate Burst Terminate Burst, Latch CA, Begin New Read, Determine AutoPrecharge ILLEGAL Bank Active / ILLEGAL Terminate Burst, Precharge ILLEGAL ILLEGAL
Notes
2 2 4 5 5
H BA, RA L BA, A10 HX Op-Code, ModeL Add XX HX L BA
2
H BA, CA, A10 L BA, CA, A10
3
H BA, RA L BA, A10
2
HX REFA Op-Code, ModeL MRS Add
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
DDR SDRAM (Rev.1.1)
9
IS43R83200B, IS46R83200B I IS43R16160B, IS46R16160B Preliminary I
FUNCTION TRUTH TABLE (continued)
Current State WRITE(AutoPrecharge Disabled) /CS /RAS /CAS /WE Address H X X XX L H H HX L L L L L L L READ with Auto-Precharge H L L L L L L L L WRITE with Auto-Precharge H L L L L L L L L H H H L L L L X H H H H L L L L X H H H H L L L L H L L H H L L X H H L L H H L L X H H L L H H L L L BA H BA, CA, A10 L BA, CA, A10 H BA, RA L BA, A10 HX Op-Code, ModeL Add XX HX L H L H L BA BA, CA, A10 BA, CA, A10 BA, RA BA, A10 Command DESEL NOP TERM READ / READA WRITE / WRITEA ACT PRE / PREA REFA MRS DESEL NOP TERM READ / READA WRITE / WRITEA ACT PRE / PREA
Zentel Electronics Corporation
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
Action NOP (Continue Burst to END) NOP (Continue Burst to END) ILLEGAL Terminate Burst, Latch CA, Begin Read, Determine Auto-Precharge Terminate Burst, Latch CA, Begin Write, Determine Auto-Precharge Bank Active / ILLEGAL Terminate Burst, Precharge ILLEGAL ILLEGAL NOP (Continue Burst to END) NOP (Continue Burst to END) ILLEGAL ILLEGAL ILLEGAL Bank Active / ILLEGAL Precharge / ILLEGAL ILLEGAL ILLEGAL NOP (Continue Burst to END) NOP (Continue Burst to END) ILLEGAL ILLEGAL ILLEGAL Bank Active / ILLEGAL Precharge / ILLEGAL ILLEGAL ILLEGAL
Notes
3 3 2
2 2
HX REFA Op-Code, ModeL MRS Add XX DESEL H L H L H X BA BA, CA, A10 BA, CA, A10 BA, RA NOP TERM READ / READA WRITE / WRITEA ACT
2 2
L BA, A10 PRE / PREA HX REFA Op-Code, ModeL MRS Add
10
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
DDR SDRAM (Rev.1.1)
Zentel Electronics Corporation
IS43R83200B, IS46R83200B Preliminary IS43R16160B, IS46R16160B
FUNCTION TRUTH TABLE (continued)
Current State PRECHARGING /CS /RAS /CAS /WE Address H X X XX L L L L L L L ROW ACTIVATING H L L L L L L L WRITE RECOVERING H L L L L L L L H H H L L L L X H H H L L L L X H H H L L L L H H L H H L L X H H L H H L L X H H L H H L L HX L BA X BA, CA, A10 H BA, RA L BA, A10
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
Command DESEL NOP TERM READ / WRITE ACT PRE / PREA
Action NOP (Idle after tRP) NOP (Idle after tRP) ILLEGAL ILLEGAL ILLEGAL NOP (Idle after tRP) ILLEGAL ILLEGAL NOP (Row Active after tRCD) NOP (Row Active after tRCD) ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL NOP NOP ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL
Notes
2 2 2 4
HX REFA Op-Code, ModeL MRS Add XX DESEL HX L BA X BA, CA, A10 H BA, RA L BA, A10 NOP TERM READ / WRITE ACT PRE / PREA
2 2 2 2
HX REFA Op-Code, ModeMRS L Add XX DESEL HX L BA X BA, CA, A10 H BA, RA L BA, A10 NOP TERM READ / WRITE ACT PRE / PREA
2 2 2 2
HX REFA Op-Code, ModeMRS L Add
DDR SDRAM Solution, Integrated Silicon(Rev.1.1)Inc.
Rev. E 08/13/2010
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IS43R83200B, IS46R83200B I Preliminary IS43R16160B, IS46R16160B I
FUNCTION TRUTH TABLE (continued)
Current State /CS /RAS /CAS /WE Address REFRESHING H X X XX L L L L L L L MODE REGISTER SETTING H L L L L L L L H H H L L L L X H H H L L L L H H L H H L L X H H L H H L L H L X H L H L X H L X H L H L X BA BA, CA, A10 BA, RA BA, A10
Zentel Electronics Corporation
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
Command DESEL NOP TERM READ / WRITE ACT PRE / PREA
Action NOP (Idle after tRC) NOP (Idle after tRC) ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL NOP (Row Active after tRSC) NOP (Row Active after tRSC) ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL
Notes
X REFA Op-Code, ModeMRS Add X DESEL X BA BA, CA, A10 BA, RA BA, A10 NOP TERM READ / WRITE ACT PRE / PREA
X REFA Op-Code, ModeMRS Add
ABBREVIATIONS: H=High Level, L=Low Level, X=Don't Care BA=Bank Address, RA=Row Address, CA=Column Address, NOP=No Operation NOTES: 1. All entries assume that CKE was High during the preceding clock cycle and the current clock cycle. 2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA, depending on the state of that bank. 3. Must satisfy bus contention, bus turn around, write recovery requirements. 4. NOP to bank precharging or in idle state. May precharge bank indicated by BA. 5. ILLEGAL if any bank is not idle. ILLEGAL = Device operation and/or data-integrity are not guaranteed.
12
DDR SDRAM (Rev.1.1)
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
IS43R83200B, IS46R83200B Preliminary IS43R16160B, IS46R16160B
Zentel Electronics Corporation
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
FUNCTION TRUTH TABLE for CKE
Current State SELFREFRESHING CKE n-1 H L L L L L L POWER DOWN H L L ALL BANKS IDLE H H H H H H H L ANY STATE other than listed above H H L L CKE n X H H H H H L X H L H L L L L L L X H L H L /CS X H L L L L X X X X X L H L L L L X X X X X /RAS X X H H H L X X X X X L X H H H L X X X X X /CAS X X H H L X X X X X X L X H H L X X X X X X /WE X X H L X X X X X X X H X H L X X X X X X X Address X X X X X X X X X X X X X X X X X X X X X X INVALID Exit Self-Refresh (Idle after tRC) Exit Self-Refresh (Idle after tRC) ILLEGAL ILLEGAL ILLEGAL NOP (Maintain Self-Refresh) INVALID Exit Power Down to Idle NOP (Maintain Self-Refresh) Refer to Function Truth Table Enter Self-Refresh Enter Power Down Enter Power Down ILLEGAL ILLEGAL ILLEGAL Refer to Current State =Power Down Refer to Function Truth Table Begin CLK Suspend at Next Cycle Exit CLK Suspend at Next Cycle Maintain CLK Suspend 3 3 2 2 2 2 2 2 2 2 Action Notes 1 1 1 1 1 1 1
ABBREVIATIONS: H=High Level, L=Low Level, X=Don't Care NOTES: 1. CKE Low to High transition will re-enable CLK and other inputs asynchronously. A minimum setup time must be satisfied before any command other than EXIT. 2. Power-Down and Self-Refresh can be entered only from the All Banks Idle State. 3. Must be legal command.
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
DDR SDRAM (Rev.1.1)
13
IS43R83200B, IS46R83200B I Preliminary IS43R16160B, IS46R16160B I
SIMPLIFIED STATE DIAGRAM
POWER APPLIED
Zentel Electronics Corporation
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
POWER ON
PREA
PRE CHARGE ALL
REFS
SELF REFRESH
MRS
REFSX REFA
MODE REGISTER SET
MRS
IDLE
AUTO REFRESH
CKEL CKEH
Active Power Down
CKEH
ACT CKEL
POWER DOWN
ROW ACTIVE
WRITE WRITE WRITEA READA READ READ READ
BURST STOP
WRITE
READ
TERM
WRITEA READA
READA
WRITEA
PRE
PRE PRE
READA
PRE CHARGE Automatic Sequence Command Sequence
14
DDR SDRAM (Rev.1.1)
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
IS43R83200B, IS46R83200B Preliminary IS43R16160B, IS46R16160B
POWER ON SEQUENCE
Zentel Electronics Corporation
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
Before starting normal operation, the following power on sequence is necessary to prevent a SDRAM from damaged or multifunctioning. 1. Apply VDD before or the same time as VDDQ 2. Apply VDDQ before or at the same time as VTT & Vref 3. Maintain stable condition for 200us after stable power and CLK, apply NOP or DSEL 4. Issue precharge command for all banks of the device 5. Issue EMRS 6. Issue MRS for the Mode Register and to reset the DLL 7. Issue 2 or more Auto Refresh commands 8. Maintain stable condition for 200 cycle After these sequence, the DDR SDRAM is idle state and ready for normal operation.
Burst Length, Burst Type and /CAS Latency can be programmed by setting the mode register (MRS). The mode register stores these data until the next MRS command, which may be issued when all banks are in idle state. After tMRD from a MRS command, the DDR SDRAM is ready for new command.
MODE REGISTER
CLK /CLK /CS /RAS /CAS /WE
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 0 0 0 0 0 0 DR 0 LTMODE BT BL
BA0 BA1 A12-A0
V
Latency Mode
CL 000 001 010 011 100 101 110 111
/CAS Latency R R 2 3 R R 2.5 R
NO YES
Burst Length
BL 000 001 010 011 100 101 110 111
0 1
BT=0 R 2 4 8 R R R R
BT=1 R 2 4 8 R R R R
Sequential Interleaved
Burst Type DLL Reset 0 1
R: Reserved for Future Use
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
DDR SDRAM (Rev.1.1)
15
IS43R83200B, IS46R83200B I Preliminary IS43R16160B, IS46R16160B I
EXTENDED MODE REGISTER
Zentel Electronics Corporation
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
DLL disable / enable mode can be programmed by setting the extended mode register (EMRS). The extended mode register stores these data until the next EMRS command, which may be issued when all banks are in idle state. After tMRD from a EMRS command, the DDR SDRAM is ready for new command.
CLK /CLK /CS /RAS /CAS
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 0 1 0 0 0 0 0 0 0 0 0 0 0
DS DD
/WE BA0 BA1 A12-A0
V
DLL Disable
0 1
DLL Enable DLL Disable
Drive Strength
0 1
Normal Weak
16
DDR SDRAM (Rev.1.1)
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B Preliminary
Zentel Electronics Corporation
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
/CLK CLK Command Address DQS DQ CL= 2 BL= 4
Read Y
Write Y
Q0 Q1 Q2 Q3
D0 D1 D2 D3
/CAS Latency
Burst Length
Burst Length
Initial Address A2 0 0 0 0 1 1 1 1 A1 A0 0 0 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1
BL Sequential 0 1 2 8 3 4 5 6 7 0 4 1 2 3 0 1 1 2 3 4 5 6 7 0 1 2 3 0 1 0 2 3 4 5 6 7 0 1 2 3 0 1 3 4 5 6 7 0 1 2 3 0 1 2 4 5 6 7 0 1 2 3 5 6 7 0 1 2 3 4
Column Addressing Interleaved 6 7 0 1 2 3 4 5 7 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 0 1 2 3 0 1 1 0 3 2 5 4 7 6 1 0 3 2 1 0 2 3 0 1 6 7 4 5 2 3 0 1 3 2 1 0 7 6 5 4 3 2 1 0 4 5 6 7 0 1 2 3 5 4 7 6 1 0 3 2 6 7 4 5 2 3 0 1 7 6 5 4 3 2 1 0
2
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
DDR SDRAM (Rev.1.1)
17
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B
ABSOLUTE MAXIMUM RATINGS
Symbol Vdd VddQ VI VO IO Pd Topr Parameter Supply Voltage Supply Voltage for Output Input Voltage Output Voltage Output Current Power Dissipation Operating Temperature Ta = 25 C
o
Conditions with respect to Vss with respect to VssQ with respect to Vss with respect to VssQ
Ratings -0.5 ~ 3.7 -0.5 ~ 3.7 -0.5 ~ VDD+0.5 -0.5 ~ VDDQ +0.5 50 1500
Unit V V V V mA mW
o
Commercial Temperature Industrial Temperature Automotive Temperature
-40 to +85 -40 to +85
-65 ~ 150
o
0 to 70
C
Tstg
Storage Temperature
C
DC OPERATING CONDITIONS o o
(Ta=0 ~ 70 C for Commercial. Ta = -40 ~ +85 C for Industrial and Automotive) Limits Symbol Parameter Min. Typ.
Vdd VddQ VREF VTT VIL(DC) Supply Voltage I/O Supply Voltage I/O Reference Volatage I/O Termination Voltage Input Low Voltage 2.3 2.3 0.49*VddQ VREF-0.04 Vref+0.15 -0.3 -0.3 0.36 -2 -5 -16.2 16.2 2.5 2.5 0.5*VddQ VREF
Max. 2.7 2.7 0.51*VddQ VREF+0.04 Vdd+0.3 Vref-0.15 VddQ+0.3 VddQ+0.6 2 5
Unit V V V V V V V V uA uA mA mA
Notes
VIH(DC) Input High Voltage VIN(DC) Input Voltage Level, CK and /CK inputs VID(DC) Input Differential Voltage, CK and /CK inputs IL IOZ IOH IOL
Input Leakage Current, Any input 0VOutput Leakage Current DQs are disabled ; 0VAC OPERATING CONDITIONS
(Ta=0 ~ 70oC for Commercial. Ta = -40 ~ +85oC for Industrial and Automotive) (Vdd = VddQ = 2.5V + 0.2V, Vss = VssQ = 0V, unless otherwise noted)
Symbol Parameter Limits Min. Vref+0.31 Vref-0.31 0.7
0.5*VddQ-0.2
Typ.
Max.
Unit V V V V
No tes
VIH(A C) In p u t Hig h Vo ltag e VIL(A C) In p u t Lo w Vo ltag e VID(AC) Input Differential Voltage, CK and /CK inputs VIX(AC) Input Crossing Point Voltage, CK and /CK inputs
VddQ+0.6 0.5*VddQ
0.5*VddQ-0.2
18
Integrated Silicon Solution, Inc.
Rev. E 08/13/09
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B
AC Overshoot/Undershoot Specification for Address and Control Pins
Parameter Peak amplitude allowed for overshoot Peak amplitude allowed for undershoot Area between the overshoot signal and VDD must be less than or equal to Area between the undershoot signal and GND must be less than or equal to Max. 1.5 1.5 4.5 4.5 Unit V V V-ns V-ns
+5 +4 +3 Volts +2 (V) +1 0 -1 -2 -3
Max. amplitude = 1.5 V
Overshoot VDD Ground
Max. area = 4.5 V-ns
Undershoot
3 4 5 6
0
1
2
Time (ns)
Address and Control AC Overshoot and Undershoot Definition
Overshoot/Undershoot Specification for Data, Strobe, and Mask Pins
Parameter Peak amplitude allowed for overshoot Peak amplitude allowed for undershoot Area between the overshoot signal and VDD must be less than or equal to Area between the undershoot signal and GND must be less than or equal to Max 1.2 1.2 2.4 2.4 Unit V V V-ns V-ns
+5 +4 +3 Volts +2 (V) +1 0 -1 -2 -3
Max. amplitude = 1.2 V
Overshoot VDD Ground
Max. area = 2.4 V-ns
Undershoot
4 5 6
0
1
2
3
Time (ns)
DQ/DM/DQS AC Overshoot and Undershoot Definition
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
19
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B
AVERAGE SUPPLY CURRENT from Vdd
(
o
C (Vdd = VddQ = 2.5V + 0.2V, Vss = VssQ = 0V, Output Open, unless otherwise noted)
Symbol
Parameter/Test Conditions
-5 185
Limits(Max.) -6 165
-75 150
Unit
Notes
OPERATING CURRENT: One Bank; Active-Read-Precharge;Burst = 2; t IDD1 RC = t RC MIN; t CK = t CK MIN; IOUT= 0mA; Address and control inputs changing once per clock cycle IDD2P PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle; power-down mode; CKE 30
25
20
IDLE STANDBY CURRENT: /CS > VIH (MIN); All banks idle; IDD2N CKE > VIH (MIN); t CK = t CK MIN; Address and other control inputs changing once per clock cycle IDD3P ACTIVE POWER DOWN STANDBY CURRENT: One bank active;power down mode;CKE VIL(MAX);t CK = t CK MIN ACTIVE STANDBY CURRENT: /CS > VIH (MIN); CKE > VIH (MIN); One bank; Active-Precharge; t RC = t RAS MAX; t CK = t CK MIN; DQ,DM and DQS inputs changing twice per clock cycle; address and other control inputs changing once per clock cycle
60
55
50
50
45
40 mA
IDD3N
95
90
75
OPERATING CURRENT: Burst =2; Read ; Continuous burst;All banks IDD4R active; Address and control inputs changing once per clock cycle;t CK = t CK MIN; IOUT = 0 mA OPERATING CURRENT: Burst =2; Write ; Continuous burst;All banks IDD4W active; Address and control inputs changing once per clock cycle;t CK = t CK MIN; DQ and DQS inputs changing twice per clock cycle IDD5 AUTO REFRESH CURRENT: t RC = t RFC (MIN) IDD6 SELF REFRESH CURRENT: CKE < 0.2V
290
250
210
290 170 5
250 160 5
210 150 5
20
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B
AC TIMING REQUIREMENTS
Symbol tAC tCH tCL tCK tDS tDH tIPW tHZ tLZ AC Characteristics Parameter DQ Output access time from CLK//CLK CLK High level width CLK Low level width
CL=3.0
-5 Min. -0.70 -0.6 0.45 0.45 5 5 7.5 0.4 0.4 2.2 1.75 +0.70 -0.70 +0.70 0.40 tCLmin or tCHmin tHP-tQHS 0.50 0.72 0.35 0.35 0.2 0.2 2 0 0.4
max (0.25*tck, 1.5ns)
-6 Max +0.70 +0.6 0.55 0.55 7.5 12 12 Min. -0.70 -0.60 0.45 0.45 6 6 7.5 0.45 0.45 2.2 1.75 +0.70 -0.70 +0.70 0.45 tCLmin or tCHmin tHP-tQHS 0.55 0.75 0.35 0.35 0.2 0.2 2 0 0.6 0.4
0.25*tck
-75 Max +0.70 +0.60 0.55 0.55 12 12 12 Min. -0.75 -0.75 0.45 0.45 7.5 7.5 7.5 0.5 0.5 2.2 1.75 +0.75 -0.75 +0.75 0.5 tCLmin or tCHmin tHP-tQHS 0.75 0.75 0.35 0.35 0.2 0.2 2 0 0.6 0.4
0.25*tck
Max +0.75 +0.75 0.55 0.55 12 12 12
Unit ns ns tCK tCK ns ns ns ns ns ns ns ns ns ns ns ns
Notes
tDQSCK DQS Output access time from CLK//CLK
CLK cycle time Input Setup time (DQ,DM) Input Hold time(DQ,DM) Control & address input pulse width (for each input) Data-out-high impedance time from CLK//CLK Data-out-low impedance time from CLK//CLK
CL=2.5 CL=2.0
tDIPW DQ and DM input pulse width (for each input)
14 14
tDQSQ DQ Valid data delay time from DQS tHP tQH tQHS tDQSS Clock half period DQ output hold time from DQS (per access) Data hold skew factor (for DQS & associated DQ signals) Write command to first DQS latching transition
20
1.25
1.25
1.25
tCK tCK tCK tCK tCK tCK ns 16 15
tDQSH DQS input High level width tDQSL DQS input Low level width tDSS tDSH tMRD DQS falling edge to CLK setup time DQS falling edge hold time from CLK Mode Register Set command cycle time
tWPRES Write preamble setup time tWPST Write postamble tWPRE Write preamble
0.6
tCK ns ns ns
tIS tIH tRPST tRPRE
Input Setup time (address and control) Input Hold time (address and control) Read postamble Read preamble
0.6 0.6 0.4 0.9 0.6 1.1
0.75 0.75 0.4 0.9 0.6 1.1
0.9 0.9 0.4 0.9 0.6 1.1
19 19
tCK tCK
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
21
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B
AC TIMING REQUIREMENTS(Continues)
Symbol tRAS tRC tRFC tRCD tRP tRRD tWR tDAL tWTR
AC Characteristics Parameter Row Active time Row Cycle time(operation) Auto Ref. to Active/Auto Ref. command period Row to Column Delay Row Precharge time Act to Act Delay time Write Recovery time Auto Precharge write recovery + precharge time Internal Write to Read Command Delay
-5 Min. 40 55 70 15 15 10 15 Max 120,000 Min. 42 60 72 18 18 12 15
-6 Max 120,000 Min. 45 65 75 20 20 15 15
-75 Max 120,000
Unit ns ns ns ns ns ns ns tCK tCK ns tCK tCK tCK
Notes
-
2 75 200 1 1 7.8
-
1 75 200 1 1 7.8
-
1 75 200 1 1 7.8
21
tXSNR Exit Self Ref. to non-Read command tXSRD Exit Self Ref. to -Read command tXPNR Exit Power down to command tXPRD Exit Power down to -Read command tREFI Average Periodic Refresh interval
18 17
s
Output Load Condition
DQS
VTT=VREF 50 VOUT Zo=50 30pF VREF
VREF
DQ
VREF
Output Timing Measurement Reference Point
CAPACITANCE
(Ta= 25 C, Vdd = VddQ = 2.5V + 0.2V Vss = VssQ = 0V, unless otherwise noted)
o
Symbol CI(A) CI(C) CI(K) CI/O
Parameter Input Capacitance, address pin Input Capacitance, control pin Input Capacitance, CLK pin I/O Capacitance, I/O, DQS, DM pin
Test Condition VI=1.25v f=100MHz VI=25mVrms
Limits Delta Unit Notes Min. Max. Cap.(Max.) 1.3 2.5 pF 0.75 1.3 2.5 pF 1.3 2.5 0.25 pF 2 4 1.3 pF
22
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
IS43R83200B, IS46R83200B I Preliminary IS43R16160B, IS46R16160B I
Zentel Electronics Corporation
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
Notes 1. All voltages referenced to Vss. 2. Tests for AC timing, IDD, and electrical, AC and DC characteristics, may be conducted at nominal reference/supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified. 3. AC timing and IDD tests may use a VIL to VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK//CK), and parameter specifications are guaranteed for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals is 1V/ns in the range between VIL(AC) and VIH(AC). 4. The AC and DC input level specifications are as defined in the SSTL_2 Standard (i.e. the receiver will effectively switch as a result of the signal crossing the AC input level, and will remain in that state as long as the signal does not ring back above (below) the DC input LOW (HIGH) level. 5. VREF is expected to be equal to 0.5*VddQ of the transmitting device, and to track variations in the DC level of the same. Peak-to-peak noise on VREF may not exceed +2% of the DC value. 6. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track variations in the DC level of VREF. 7. VID is the magnitude of the difference between the input level on CLK and the input level on /CLK. 8. The value of VIX is expected to equal 0.5*VddQ of the transmitting device and must track variations in the DC level of the same. 9. Enables on-chip refresh and address counters. 10. IDD specifications are tested after the device is properly initialized. 11. This parameter is sampled. VddQ = 2.5V+0.2V, Vdd = 2.5V + 0.2V , f = 100 MHz, Ta = 25oC, VOUT(DC) = VddQ/2, VOUT(PEAK TO PEAK) = 25mV. DM inputs are grouped with I/O pins - reflecting the fact that they are matched in loading (to facilitate trace matching at the board level). 12. The CLK//CLK input reference level (for timing referenced to CLK//CLK) is the point at which CLK and /CLK cross; the input reference level for signals other than CLK//CLK, is VREF. 13. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE< 0.3VddQ is recognized as LOW. 14. t HZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to a specific voltage level, but specify when the device output is no longer driving (HZ), or begins driving (LZ). 15. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but system performance (bus turnaround) will degrade accordingly. 16. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CLK edge. A valid transition is defined as monotonic, and meeting the input slew rate specifications of the device. When no writes were previously in progress on the bus, DQS will be transitioning from High-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS. 17. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device. 18. tXPRD should be 200 tCLK in the condition of the unstable CLK operation during the power down mode. 19. For command/address and CK & /CK slew rate > 1.0V/ns. 20. Min (tCL,tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device. 21. tDAL minimum = (tWR/tCK) + (tRP/tCK) If either addend is not an integer, it should be rounded up.
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
DDR SDRAM (Rev.1.1)
23
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B
Read Operation /CLK CLK Cmd & Add. DQS
tRPRE tDQSCK tCK tCH tCL
tIS
tIH VREF
Valid Data tRPST tDQSQ
tQH
DQ
tAC
Write Operation / tDQSS=max. /CLK CLK DQS
tDQSS tWPRES tWPRE tDSS tDQSL tDS tDQSH tDH
tWPST
DQ Write Operation / tDQSS=min. /CLK CLK DQS
tDQSS tWPRES tWPRE tDQSL tDS tDQSH tDH tDSH
tWPST
DQ
24
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
IS43R83200B, IS46R83200B I Preliminary IS43R16160B, IS46R16160B I
OPERATIONAL DESCRIPTION BANK ACTIVATE
Zentel Electronics Corporation
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
The DDR SDRAM has four independent banks. Each bank is activated by the ACT command with the bank addresses (BA0,1). A row is indicated by the row address A0-12. The minimum activation interval between one bank and the other bank is tRRD.
PRECHARGE
The PRE command deactivates the bank indicated by BA0,1. When multiple banks are active, the precharge all command (PREA,PRE+A10=H) is available to deactivate them at the same time. After tRP from the precharge, an ACT command to the same bank can be issued.
Bank Activation and Precharge All (BL=8, CL=2)
/CLK CLK
2 ACT command / tRCmin tRCmin PRE tRAS Xb tRCD Y BL/2 0 1 Xb tRP Xb ACT
Command A0-9,11,12
ACT tRRD Xa
ACT READ
A10 BA0,1
Xa
Xb
00
01
00
01
DQS DQ
Qa0 Qa1 Qa2 Qa3 Qa4 Qa5 Qa6 Qa7
Precharge all
A precharge command can be issued at BL/2 from a read command without data loss.
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
DDR SDRAM (Rev.1.1)
25
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B Preliminary
READ
Zentel Electronics Corporation
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
After tRCD from the bank activation, a READ command can be issued. 1st Output data is available after the /CAS Latency from the READ, followed by (BL-1) consecutive data when the Burst Length is BL. The start address is specified by A0-9(x8)/A0-8(x16), and the address sequence of burst data is defined by the Burst Type. A READ command may be applied to any active bank, so the row precharge time (tRP) can be hidden behind continuous output data by interleaving the multiple banks. When A10 is high at a READ command, the auto-precharge (READA) is performed. Any command(READ,WRITE,PRE,ACT) to the same bank is inhibited till the internal precharge is complete. The internal precharge starts at BL/2 after READA. The next ACT command can be issued after (BL/2+tRP) from the previous READA.
Multi Bank Interleaving READ (BL=8, CL=2)
/CLK CLK Command A0-9,11,12 A10 BA0,1 DQS DQ
/CAS latency
Qa0 Qa1 Qa2 Qa3 Qa4 Qa5 Qa6 Qa7 Qb0 Qb1 Qb2 Qb3 Qb4 Qb5 Qb7 Qb8
ACT tRCD Xa Xa 00
READ ACT Y 0 00 Xb Xb 10
READ PRE Y 0 10 0 00
Burst Length
26
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
DDR SDRAM (Rev.1.1)
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B
READ with Auto-Precharge (BL=8, CL=2,2.5,3.0)
0 /CLK CLK Command
ACT tRCD READ BL/2 Y 1 00 tRP
1
2
3
4
5
6
BL/2 + tRP
7
8
9
10
11
12
A0-9,11,12 A10 BA0,1 DQS CL=2 DQ DQS CL=2.5 DQ DQS CL=3.0 DQ
Xa Xa 00
Qa0
Qa1
Qa2
Qa3
Qa4 Qa5
Qa6
Qa7
Qa0
Qa1
Qa2
Qa3
Qa4
Qa5
Qa6
Qa7
Qa0
Qa1
Qa2
Qa3
Qa4
Qa5
Qa6
Qa7
Internal Precharge Start Timing
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
27
IS43R83200B, IS46R83200B Preliminary IS43R16160B, IS46R16160B
WRITE
Zentel Electronics Corporation
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
After tRCD from the bank activation, a WRITE command can be issued. 1st input data is set from the WRITE command with data strobe input, following (BL-1) data are written into RAM, when the Burst Length is BL. The start address is specified by A0-9(x8)/A0-8(x16), and the address sequence of burst data is defined by the Burst Type. A WRITE command may be applied to any active bank, so the row precharge time (tRP) can be hidden behind continuous input data by interleaving the multiple banks. From the last data to the PRE command, the write recovery time (tWRP) is required. When A10 is high at a WRITE command, the auto-precharge(WRITEA) is performed. Any command(READ,WRITE,PRE,ACT) to the same bank is inhibited till the internal precharge is complete. The next ACT command can be issued after tDAL from the last input data cycle.
Multi Bank Interleaving WRITE (BL=8)
/CLK CLK Command A0-9,11,12 A10 BA0,1 DQS DQ
Da0 Da1 Da2 Da3 Da4 Da5 Da6 Da7 Db0 Db1 Db2 Db3 Db4 Db5 Db6 Db7
ACT tRCD Xa D Xa Xa 00
WRITE ACT Ya 0 00 Xb Xb 10 tRCD D
WRITE Yb 0 10
PRE
PRE
0 00
0 10
28
DDR SDRAM (Rev.1.1)
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
Zentel Electronics Corporation
IS43R83200B, IS46R83200B I Preliminary IS43R16160B, IS46R16160B I
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
WRITE with Auto-Precharge (BL=8)
0 /CLK CLK Command A0-9,11,12 A10 BA0,1 DQS DQ
Da0 Da1 Da2 Da3 Da4 Da5 Da6 Da7
1
2
3
4
5
6
7
8
9
10
11
12
ACT tRC Xa Xa 00 D
WRITE tDAL Y 1 00
ACT Xb Xb 00
Integrated Silicon Solution, Inc. DDR SDRAM (Rev.1.1)
Rev. E 08/13/2010
29
Zentel Electronics Corporation
Preliminary IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B
BURST INTERRUPTION
[Read Interrupted by Read]
Preliminary
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
Burst read operation can be interrupted by new read of any bank. Random column access is allowed. READ to READ interval is minimum 1CLK.
Read Interrupted by Read (BL=8, CL=2)
/CLK CLK Command A0-9,11,12 A10 BA0,1 DQS DQ
Qai0 Qai1 Qaj0 Qaj1 Qaj2 Qaj3 Qak0 Qak1 Qak2 Qak3 Qak4 Qak5 Qal0 Qal1 Qal2 Qal3 Qal4 Qal5 Qal6 Qal7
READ READ Yi 0 00 Yj 0 00
READ Yk 0 10
READ Yl 0 01
[Read Interrupted by precharge]
Burst read operation can be interrupted by precharge of the same bank. READ to PRE interval is minimum 1 CLK. A PRE command to output disable latency is equivalent to the /CAS Latency. As a result, READ to PRE interval determines valid data length to be output. The figure below shows examples of BL=8. Read Interrupted by Precharge (BL=8)
/CLK CLK Command DQS DQ Command
READ
Q0 Q1 Q2 Q3 Q4 Q5
READ
PRE
PRE
CL=2.0
DQS DQ Command DQS DQ
Q0 Q1 Q0 Q1 Q2 Q3
READ PRE
30
DDR SDRAM (Rev.1.1)
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
Zentel Electronics Corporation
I IS43R83200B, IS46R83200B Preliminary IS43R16160B, IS46R16160B I
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
/CLK CLK Command DQS DQ Command
Read Interrupted by Precharge (BL=8)
READ PRE
Q0
Q1
Q2
Q3
Q4
Q5
READ
PRE
CL=2.5
DQS DQ Command DQS DQ
Q0 Q1 Q0 Q1 Q2 Q3
READ PRE
Read Interrupted by Precharge (BL=8)
/CLK CLK Command DQS DQ Command
READ PRE
Q0 Q1 Q2 Q3 Q4 Q5
READ
PRE
CL=3.0
DQS DQ Command DQS DQ
Q0 Q1 Q0 Q1 Q2 Q3
READ PRE
Integrated Silicon Solution, DDR SDRAM (Rev.1.1) Inc. Rev. E
08/13/2010
31
Zentel Electronics Corporation
IS43R83200B, IS46R83200B Preliminary IS43R16160B, IS46R16160B
[Read Interrupted by Burst Stop]
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
Burst read operation can be interrupted by a burst stop command(TERM). READ to TERM interval is minimum 1 CLK. A TERM command to output disable latency is equivalent to the /CAS Latency. As a result, READ to TERM interval determines valid data length to be output. The figure below shows examples of BL=8.
Read Interrupted by TERM (BL=8)
/CLK CLK Command DQS DQ Command
READ
Q0 Q1 Q2 Q3 Q4 Q5
READ
TERM
TERM
CL=2.0
DQS DQ Command DQS DQ Command DQS DQ Command
READ
TERM
Q0 Q1 Q2 Q3 Q4 Q5 Q0 Q1 Q0 Q1 Q2 Q3
READ TERM
READ
TERM
CL=2.5
DQS DQ Command DQS DQ
Q0 Q1 Q0 Q1 Q2 Q3
READ TERM
32 DDR
SDRAM (Rev.1.1)
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B
Read Interrupted by TERM (BL=8)
/CLK CLK Command DQS DQ Command
READ
TERM
Q0 Q1 Q2 Q3 Q4 Q5
READ
TERM
CL=3.0
DQS DQ Command DQS DQ
Q0 Q1 Q0 Q1 Q2 Q3
READ TERM
[Read Interrupted by Write with TERM] Read Interrupted by TERM (BL=8)
/CLK CLK Command
READ TERM WRITE
CL=2.0
DQS DQ Command
READ
Q0 Q1 Q2 Q3 D0 D1 D2 D3 D4 D5 D6 D7
TERM
WRITE
CL=2.5
DQS DQ Command
READ TERM
Q0 Q1 Q2 Q3 D0 D1 D2 D3 D4 D5
WRITE
CL=3.0
DQS DQ
Q0 Q1 Q2 Q3 D0 D1 D2 D3 D4 D5
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
33
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B
[Write interrupted by Write]
Burst write operation can be interrupted by write of any bank. Random column access is allowed. WRITE to WRITE interval is minimum 1 CLK.
Write Interrupted by Write (BL=8)
/CLK CLK Command A0-9,11,12 A10 BA0,1 DQS DQ
Dai0 Dai1 Daj0 Daj1 Daj2 Daj3 Dak0 Dak1 Dak2 Dak3 Dak4 Dak5 Dal0 Dal1 Dal2 Dal3 Dal4 Dal5 Dal6 Dal7
WRITE WRITE Yi 0 00 Yj 0 00
WRITE Yk 0 10
WRITE Yl 0 00
[Write interrupted by Read]
Burst write operation can be interrupted by read of the same or the other bank. Random column access is allowed. Internal WRITE to READ command interval(tWTR) is minimum 1 CLK. The input data on DQ at the interrupting READ cycle is "don't care". tWTR is referenced from the first positive edge after the last data input.
Write Interrupted by Read (BL=8, CL=2.5)
/CLK CLK Command A0-9,11,12 A10 BA0,1 DM QS DQ
Dai0 Dai1 Qaj0 Qaj1 Qaj2 Qaj3 Qaj4 Qaj5 Qaj6 Qaj7
WRITE Yi 0 00
READ Yj 0 00
tWTR
34
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
IS43R83200B, IS46R83200B I IS43R16160B, IS46R16160B Preliminary I
[Write interrupted by Precharge]
Zentel Electronics Corporation
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM
Burst write operation can be interrupted by precharge of the same or all bank. Random column access is allowed. tWR is referenced from the first positive CLK edge after the last data input.
Write Interrupted by Precharge (BL=8, CL=2.5)
/CLK CLK Command A0-9,11,12 A10 BA0,1 DM QS DQ
Dai0 Dai1
WRITE Yi 0 00
PRE
00
tWR
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
35
DDR SDRAM (Rev.1.1)
IS43R83200B, IS46R83200B Preliminary IS43R16160B, IS46R16160B
[Initialize and Mode Register sets]
/CLK CLK CKE Command A0-12 A10 BA0,1 DQS DQ tMRD
Extended Mode Register Set 1 NOP PRE EMRS
Code Code
Zentel Electronics Corporation
A3S56D30/40ETP
256M Double Data Rate Synchronous DRAM Initialize and MRS
MRS
Code Code
PRE
AR
AR
MRS
ACT
Xa
1
Code
Xa Xa
10
00
00
tMRD
tRP
tRFC
tRFC
tMRD
Mode Register Set, Reset DLL
[AUTO REFRESH]
Single cycle of auto-refresh is initiated with a REFA(/CS=/RAS=/CAS=L,/WE=CKE=H) command. The refresh address is generated internally. 8192 REFA cycles within 64ms refresh 256Mbits memory cells. The auto-refresh is performed on 4 banks concurrently. Before performing an auto refresh, all banks must be in the idle state. Auto-refresh to auto-refresh interval is minimum tRFC . Any command must not be supplied to the device before tRFC from the REFA command. Auto-Refresh
/CLK CLK /CS /RAS /CAS /WE CKE A0-12 BA0,1
tRFC NOP or DESELECT
Auto Refresh on All Banks
36
Auto Refresh on All Banks
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
DDR SDRAM (Rev.1.1)
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B
[SELF REFRESH]
Self -refresh mode is entered by issuing a REFS command (/CS=/RAS=/CAS=L,/WE=H,CKE=L). Once the self-refresh is initiated, it is maintained as long as CKE is kept low. During the selfrefresh mode, CKE is asynchronous and the only enable input, all other inputs including CLK are disabled and ignored, so that power consumption due to synchronous inputs is saved. To exit the self-refresh, supplying stable CLK inputs, asserting DESEL or NOP command and then asserting CKE for longer than tXSNR/tXSRD.
Self-Refresh
/CLK CLK /CS /RAS /CAS /WE CKE A0-12 BA0,1
X X tXSNR Self Refresh Exit tXSRD
Y Y
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
37
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B
[Power DOWN]
The purpose of CLK suspend is power down. CKE is synchronous input except during the selfrefresh mode. A command at cycle is ignored. From CKE=H to normal function, DLL recovery time is NOT required in the condition of the stable CLK operation during the power down mode.
Power Down by CKE
/CLK CLK CKE Command CKE Command
ACT NOP PRE NOP
Standby Power Down
NOP
Valid
tXPNR/tXPRD Active Power Down
NOP
Valid
[DM CONTROL] DM is defined as the data mask for writes. During writes,DM masks input data word by word. DM to write mask latency is 0. DM Function(BL=8,CL=2)
/CLK CLK Command DM DQS DQ
D0 D1 D3 D4 D5 D6 D7 Q0 Q1 Q2 Q3 Q4 Q5 Q6
WRITE
READ
Don't Care
masked by DM=H
38
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B
ORDERING INFORMATION - Vdd = 2.5V Commercial Range: 0C to +70C
Frequency 200 MHz Speed (ns) 5 Order Part No. IS43R83200B-5TL IS43R16160B-5TL IS43R16160B-5BL 166 MHz 6 IS43R83200B-6TL IS43R16160B-6TL IS43R16160B-6BL Organization 32Mx8 16Mx16 16Mx16 32Mx8 16Mx16 16Mx16 Package 66-pin TSOP-II, Lead-free 66-pin TSOP-II, Lead-free 60-ball TF-BGA, Lead-free 66-pin TSOP-II, Lead-free 66-pin TSOP-II, Lead-free 60-ball TF-BGA, Lead-free
Industrial Range: -40C to +85C
Frequency 200 MHz Speed (ns) 5 Order Part No. IS43R83200B-5TLI IS43R16160B-5TLI IS43R16160B-5TI IS43R16160B-5BLI IS43R16160B-5BI 166 MHz 6 IS43R83200B-6TLI IS43R16160B-6TLI IS43R16160B-6BLI IS43R16160B-6BI Organization 32Mx8 16Mx16 16Mx16 16Mx16 16Mx16 32Mx8 16Mx16 16Mx16 16Mx16 Package 66-pin TSOP-II, Lead-free 66-pin TSOP-II, Lead-free 66-pin TSOP-II 60-ball TF-BGA, Lead-free 60-ball TF-BGA 66-pin TSOP-II, Lead-free 66-pin TSOP-II, Lead-free 60-ball TF-BGA, Lead-free 60-ball TF-BGA
Automotive Range (A1): -40C to +85C
Frequency 166 MHz Speed (ns) 6 Order Part No. IS46R83200B-6TLA1 IS46R16160B-6TLA1 IS46R16160B-6BLA1 Organization 32Mx8 16Mx16 16Mx16 Package 66-pin TSOP-II, Lead-free 66-pin TSOP-II, Lead-free 60-ball TF-BGA, Lead-free
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
39
40
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B
NOTE :
1. Controlling dimension : mm 2. Dimension D and E1 do not include mold protrusion . 3. Dimension b does not include dambar protrusion/intrusion. 4. Formed leads shall be planar with respect to one another within 0.1mm at the seating plane after final test.
Integrated Silicon Solution, Inc.
Package Outline
10/04/2006
Rev. E 08/13/2010
IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B
Integrated Silicon Solution, Inc.
Rev. E 08/13/2010
41

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